不同工艺制备的铁电薄膜底电极Pt／Ti

Pt/Ti Bottom Electrodes of Ferroelectric Thin Films Fabricated by Electron Beam Evaporating and DC-Sputtering

摘要:

采用高真空电子束蒸与直流溅射在ＳｉＯ２／Ｓｉ基底上制备Ｐｔ／Ｔｉ底电极，对Ｐｔ／Ｔｉ在不同热处理温度下的结构与形貌进行对比研究。结果表明；由于采用不同的制备工艺，Ｐｔ晶粒在成核与生长方式上有所不同，导致了Ｐｔ薄膜在结构与形貌的差异。

Abstract:

The microstructures and morphologies 0f Pt/Ti electrodes produced by ultra-high vacuum (UHV) electron beam evaporating and dc-sputtering at various temperatures have been investigated using X-ray diffraction, scanning electron microscopy and atomicforce microscopy. The results indicate that the microstructures and morphologies of Pt/Ti electrodes are dependent on the variousgrowing modes of Pt/Ti crystal grains. A dense columnar grain structure and texture were observed as a resu1t of electron beam vaporation. UHV electron beam evaporation results in a continuous and stable Pt/Ti film at high temperatures and is reccomended as a bottom electrode processing method for the preparation of ferroelectric thin films with fine properties.