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不同工艺制备的铁电薄膜底电极Pt/Ti
中图分类号:

TN384 O484

基金项目:

国家“863”!715-002-0110,国家自然科学基金!6973020


Pt/Ti Bottom Electrodes of Ferroelectric Thin Films Fabricated by Electron Beam Evaporating and DC-Sputtering
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    摘要:

    采用高真空电子束蒸与直流溅射在SiO2/Si基底上制备Pt/Ti底电极,对Pt/Ti在不同热处理温度下的结构与形貌进行对比研究。结果表明;由于采用不同的制备工艺,Pt晶粒在成核与生长方式上有所不同,导致了Pt薄膜在结构与形貌的差异。

    Abstract:

    The microstructures and morphologies 0f Pt/Ti electrodes produced by ultra-high vacuum (UHV) electron beam evaporating and dc-sputtering at various temperatures have been investigated using X-ray diffraction, scanning electron microscopy and atomicforce microscopy. The results indicate that the microstructures and morphologies of Pt/Ti electrodes are dependent on the variousgrowing modes of Pt/Ti crystal grains. A dense columnar grain structure and texture were observed as a resu1t of electron beam vaporation. UHV electron beam evaporation results in a continuous and stable Pt/Ti film at high temperatures and is reccomended as a bottom electrode processing method for the preparation of ferroelectric thin films with fine properties.

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宋志棠 曾建明.不同工艺制备的铁电薄膜底电极Pt/Ti[J].稀有金属材料与工程,1999,(5):305~309.[Song Zhitang, Zeng Jianming, Gao Jianxia, Zhang Miao, Ling Chenglu. Pt/Ti Bottom Electrodes of Ferroelectric Thin Films Fabricated by Electron Beam Evaporating and DC-Sputtering[J]. Rare Metal Materials and Engineering,1999,(5):305~309.]
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