等离子体对钽表面渗氮处理的影响

Effect of Plasma on Surface Nitriding of Tantalum

摘要:

采用SEM，XRD等手段对钽在氢与氮等离子体中形成的表面层进行了分析，试验表明，在外界参数相同的情况下，H N等离子体的存在改变了Ta表面在H-O-N气氛中的反应路径，使反应产物由无等离子体时的Ta2O5变成了Ta6N2.57，因此处理后的表面粗糙度比无等离子体时下降了一个数量级；对等离子体的作用机理进行了探讨，认为是等离子体的存在改变了介质成分和Ta表面附近的“阴极鞘层”与Ta表面相互作用抑制了粗糙的Ta2O5形成。

Abstract:

Surface layer of tantalum produced in the mixture of hydrogen and nitrogen has been investigated using SEM and XRD. It was found that the reactions on surface of tantalum in H-O-N atmosphere can be changed by plasma. The reaction products are Ta6N2.57 and/or amorphous phase instead of Ta205. Meanwhile, the roughness of surface of tantalum treated in plasamn decreases by an order, as compared with that of tantalum treated without plasma. The reason is that changed media and the interaction between tantalum and the cathode sheath of plasma prevent from forming the rough Ta205.