SmCo／Cr薄膜中Cr底层最佳溅射条件的正交设计研究

Orthogonal Design for the Optimal Deposition of Cr Underlayer for SmCo/Cr Magnetic Films

摘要:

在SmCo/Cr薄膜中，Cr底层的取向结构对薄膜的磁学性能有很大的影响。设计了4因素3水平的正交实验L9(3^4)，并通过数理统计的方法分析了Cr底层的溅射参数对SmCo／Cr薄膜矫顽力的影响。用较少的实验得到Cr底层的最佳实验条件：靶基距为4cm，功率为50w，溅射气压为0．5Pa，溅射时间为9min。并发现了靶基距、功率和溅射气压对薄膜矫顽力的影响较大，其中靶基距是薄膜矫顽力最主要的控制因素。而溅射时间在所取的水平上对薄膜矫顽力的影响最小。本实验设计可达到95％的置信度。

Abstract:

The SmCo/Cr films have been prepared with the help of DC magnetron sputtering method. The structure of Cr underlayer depended on several sputtering factors, and directly influenced the coercivity of SmCo/Cr films. The orthogonal design of experiments and mathematical statistical method are considered as the effective methods to optimize sputtering condition of Cr underlayer for high coercivity of SmCo/Cr films. Using the orthogonal design method, the effects of the four factors, such as, the target-substrate distance, the DC power, the sputtering pressure and the sputtering time were simultaneously investigated by only 9 experiments. The optimal condition of Cr underlayer was obtained, that is 4 cm in T-S distace, 50 W in DC power, 0.5 Pa in sputtering pressure, 9 min in sputtering time. The target-substrate distance, the DC power and the sputtering pressure are very important factors for coercivity, on the other hand, the effect of sputtering time is not obvious. It can be proved that our orthogonal design of experiment is of 95% confidence.