Si（111）衬底上生长GaN晶环的研究

Formation of Gallium Nitride Crystal Loops on Silicon (111) Substrate

摘要:

利用热壁化学气相沉积在Si(111)衬底上获得GaN晶环，采用扫描电镜(SEM)、选择区电子衍射(SAED)、X射线衍射(XRD)，光致发光(PL)谱和傅里叶红外吸收谱(FTIR)对晶环的组成、结构、形貌和光学特性进行分析。初步结果证明：在Si(111)衬底上获得择优生长的六方纤锌矿结构的GaN晶环。SEM显示在均匀的薄膜上出现直径约为10μm的5品环，由XRD和SAED的分析证实晶环呈六方纤矿多晶结构，FTIR显示GaN薄膜的主要成分为GaN，同时含有少量的C污染，PL测试表明晶环呈现不同于GaN薄膜的发光特性。

Abstract:

The crystal loops of Gallium nitride (GaN) were deposited on silicon (111) substrate by using hot-wall chemical vapor deposition and thermal treatment. Scanning electron microscopy (SEM), selected area electron diffraction (SAED), x-ray diffraction (XRD), photoluminescence (PL) and Fourier Transform Infrared transmission (FTIR) Spectroscopy were employed to analyze the surface morphology, structure and optical properties of GaN layer. SEM image shows five half-loops attached to a crystal string side by side in the uniform films. XRD, SAED patterns reveal that the formed loops are polycrystalline hexagonal gallium nitride. FTIR pattern shows the main composition of the film is GaN and it contains trifle carbon contamination. New feature is found in PL pattern of the crystal loops, which is different from the bulk GaN films.