TN304.23
Project (.9030100290201025) Supported by the National Natural Science Foundation of China
庄惠照 高海永 薛成山 董志华. ZnO/Ga2O3膜的氨化温度对制作硅基GaN纳米材料的影响[J].稀有金属材料与工程,2005,34(1):73~76.[Zhuang Huizhao, Gao Haiyong, Xue Chengshan, Dong Zhihua. Effect of Ammoniating Temperature of ZnO/Ga2O3 Films on Fabrication of GaN Nanosize Materials on Si Substrates[J]. Rare Metal Materials and Engineering,2005,34(1):73~76.]
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