氨化硅基Ga2O3／Al2O3制备GaN薄膜的发光特性研究

Photoluminescence Study of GaN Film Grown by Ammoniating Ga2O3/Al2O3 Deposited on Si(111) Substrate

摘要:

研究了Ga2O3／Al2O3膜氢化反应自集结制备GaN薄膜的光致发光特性，讨论了发光机制以及生长条件对其光致发光特性的影响。样品的荧光光谱在347nm有一强发光峰，在412nm有一弱发光峰，这两个峰的强度都随着氨化温度的升高和氨化时间的增长而增强，但峰的位置保持不变。我们认为347nm的峰是GaN的带边发光峰由于薄膜中晶粒尺寸的减小而蓝移造成的，而412nm的发光峰则来源于导带到杂质受主能级的辐射复合。

Abstract:

Photoluminescence(PL) of Gallium nitride (GaN) films grown by ammoniating Ga2O3/Al2O3 films deposited on silicon (111) by rf magnetron sputtering has been studied. The mechanism and the influence of growth condition on the photoluminescence is also studied. There are two emission peaks: a strong one at 347 nm, and a weak one at 412 nm. Increasing the ammoniating temperature and lengthening the ammoniating time, the intensities of both two peaks increase, but the in locations do not move. The peak at 347 nm is considered to be the blue-shift, which was caused by micro- size of GaN grains, of the band-edge emission peak of GaN. The emission peak at 412 nm is attributed to radiant combination from conduct band to the energy level of acceptor impurity.