Zr-Si-N扩散阻挡层及其热稳定性的研究

The Study of Zr-Si-N Diffusion Barrier and Its Thermal Stability

摘要:

用反应磁控溅射法在不同偏压下沉积了Zr-Si-N扩散阻挡层,结果表明:Zr-Si-N膜的Si含量、电阻率随偏压的升高而降低;Zr-Si-N膜的晶体相随溅射偏压的升高而增加;Zr-Si-N扩散阻挡层的热稳定性高,在850℃时仍能有效阻挡Cu的扩散.

Abstract:

Zr-Si-N diffusion barrier films were deposited by reactive magnetron sputtering with different negative bias. The results reveal that the Si content and resistivity of the Zr-Si-N films decrease as negative bias increases. The crystalline phase increases with the increase of negative bias. The thermal stability of Zr-Si-N diffusion barrier was so good that Zr-Si-N diffusion barrier can effectively prevent from the diffusion of Cu.