无定形铌氧化膜的优化生长及机理分析

Optimized Growth of Amorphous Nb Oxide Film and Analyses on Its Mechanism

摘要:

铌是用于制造电解电容器的优质材料，但在进行电解反应生长无定形Nb2O5电介质膜层的过程中会同时生成2种低价态的铌的氧化物（NbO，NbO2），影响了铌电容器的性能。本研究通过对影响无定形铌氧化膜生长的各种条件进行对比实验，并就生长机理进行了深入分析，较好地控制了氧化膜中3种氧化物的相对含量，改善了铌电容器的性能。

Abstract:

Niobium is an excellent material used for production of electrolytic capacitor, but when amorphous Nb2O5 dielectric film grows during electrolysis reaction meanwhile two kinds of low valence niobium oxide (NbO2 and NbO) forms, the presence of NbO2 and NbO has bad influence on the performances of niobium capacitor. In this work, through comparative experiments of amorphous film growth condition and analysis on the growth mechanism, the relative contents of three kinds of Nb oxides are well controlled, and performance of Nb capacitor samples has been improved greatly.