TiN／Ti／SiO2／Si基板的分电极酸性化学镀铜

Electroless Acid-Based Plating Cu on TiNi/Ti/SiO2/Si Substrate

摘要:

讨论了对TiNi／Ti／SiO2／Si基板在HF＋CuSO4中采用分离双电极方法的化学酸性镀铜。Si基板和TiNUTi／SiO2／Si基板分别作为化学镀的阳极和阴极，在开路条件下进行化学镀。最佳化学镀反应条件为电极相距0．5mm，[HF]和[CuSO4]大于8％（质量分数）和0．045mol／L。最后得到覆盖率高、晶粒大小均一、结构致密、具有〈111〉择优取向的Cu膜，且Cu膜中不含Cu2O，降低了电阻率。

Abstract:

Plating Cu on TiNi/Ti/SiO2/Si substrate in the HF+CuSO4 solution by separated electrodes chemical method was discussed in this essay. Si and TiNi/Ti/SiO2/Si are used as the anode and cathode. The best condition for the plating is as followings: distance for the electrodes is 0.5 mm, [HF] and [CuSO4] more than 8 wt% and 0.045 mol/L. Finally uniform deposited Cu film with complete coverage, few voids and preference of <111> is obtained. Also deposited Cu film does not contain Cu2O, which reduces the resistivity.