氨化Si基Ga2O3/V膜制备GaN纳米线

Synthesis of Large-scale GaN Nanowires by Ammoniating Ga2O3/V Films

摘要:

氨化硅基钒应变层氧化镓膜制备了大量氮化镓纳米线, X射线衍射、扫描电子显微镜和透射电子显微镜观察发现, 纳米线具有十分光滑且干净的表面, 其直径为20~60 nm左右, 长度达到十几微米。高分辨透射电子显微镜和选区电子衍射分析结果表明, 制备的氮化稼纳米线为六方纤锌矿结构。光致发光谱显示制备的氮化稼纳米线有良好的发光特性。另外, 简单讨论了氮化稼纳米线的生长机制。

Abstract:

Large-scale GaN nanowires were synthesized on Si(111) substrates through ammoniating Ga2O3/V films. The as-grown products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results reveal that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 20 nm to 60 nm and lengths of about several tens of micrometers. The results of HRTEM and selected-area electron diffraction (SAED) show that the nanowires are pure hexagonal GaN single crystal. The photoluminescence (PL) spectrum indicates that the GaN nanowires have good emission property. The growth mechanism is discussed briefly.