化学溶液沉积制备涂层导体Eu0.3Ce0.7O1.85-x单一缓冲层

Preparation of Eu0.3Ce0.7O1.85-x Single Buffer Layer on Coated Conductors by Chemical Solution Deposition

摘要:

采用高分子辅助化学溶液沉积 (PACSD) 方法，在双轴织构的NiW (200)合金基底上沉积了厚度大于160 nm的Eu0.3Ce0.7O1.85-x(ECO)单一缓冲层。制得的ECO缓冲层双轴织构良好，表面平整、无裂纹。同时，Eu的掺杂提高了CeO2单一缓冲层薄膜的临界厚度。在沉积了ECO缓冲层的NiW基带上外延生长的YBCO薄膜，超导零电阻转变温度Tc0=86 K，临界电流密度达到Jc(0 T, 77 K)=0.4 MA/cm2。本研究提供了一种操作简单、成本低廉、性能优良的制备涂层导体单一缓冲层的

Abstract:

A novel polymer-assisted chemical solution deposition (PACSD) has been proposed to deposit an over-160nm-thick Eu0.3Ce0.7O1.85-x (ECO) single buffer layer on biaxially textured NiW (200) substrate. As-grown ECO buffer layer displayed excellent bi-axial texture as well as smooth, crack-free microstructure. It is observed that Eu-doping can augment the critical thickness of CeO2 as single buffer layer. YBCO deposited on ECO buffered NiW yielded a zero transition temperature at Tc0 = 86 K and a critical current of Jc (0 T, 77 K) = 0.4 MA/cm2. These results offer a simple and cost-effective approach for the preparation of single buffer layer on coated conductors