硫分压对光吸收层CuInS2薄膜性能的影响

Effect of Sulfur Partial Pressure on Properties of CuInS2 Absorber Films

摘要:

在不同硫分压r (r=Sn/[N2+Sn])下，采用Cu-In预制膜硫化法制备了CuInS2薄膜。用扫描电子显微镜、X射线衍射仪、霍尔测试仪、紫外-可见光分光光度计对薄膜的表面形貌、结构、电学、光学性能进行了表征分析。结果表明：随着r增加，薄膜的结晶质量提高，当r＝1/2时，晶粒大小如一，粒度保持在1 μm左右，沿[112]晶向择优生长，载流子浓度为5.6×1016 cm-3，光学带隙在1.53 eV左右

Abstract:

CuInS2 (CIS) films were prepared by electrodepositing-sulfurization at the different partial pressures of sulfur r(r=Sn/[N2+Sn]). Their surface morphologies, crystalline structure, electrical and optical properties were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Hall system and ultraviolet-visible (UV-VIS) spectraphotometers, respectively. The results show that the crystalline quality is improved with increasing of r. It is found that the CuInS2 film sulfurized at r=1/2 with the fairly large grain size of about 1 μm has (112) preferred orientation, the carrier concentration is 5.6×1016 cm-3, the optical band gap is about 1.53 eV