钽催化磁控溅射法制备GaN纳米线

Synthesis of GaN Nanowires with Tantalum Catalyst by Magnetron Sputtering

摘要:

利用磁控溅射技术通过氨化Ga2O3/Ta薄膜，合成大量的一维单晶纤锌矿型氮化镓纳米线。用X射线衍射、扫描电子显微镜、高分辨透射电子显微镜，选区电子衍射和光致发光谱对制备的氮化镓进行了表征。结果表明：制备的GaN纳米线是六方纤锌矿结构，其直径大约20~60 nm，其最大长度可达10 μm左右。室温下光致发光谱测试发现363 nm处的较强紫外发光峰。另外, 简单讨论了氮化镓纳米线的生长机制

Abstract:

Single crystalline wurzite GaN nanowires were synthesized through ammoniating Ga2O3/Ta films by RF magnetron sputtering. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), selected-area electron diffraction (SAED) and photoluminescence (PL). The results show that the nanowires have a hexagonal wurtzite structure with diameters ranging from 20 nm to 60 nm and lengths typically up to 10 μm. The PL spectrum exhibits a strong UV light emission at 363 nm. The growth mechanism of the crystalline GaN nanowires is discussed briefly