射频磁控溅射ZrW2O8薄膜的高温退火研究

Effects of Post-Deposition Annealing on ZrW2O8 Thin Films by Radio Frequency Magnetron Sputtering

摘要:

采用ZrW2O8陶瓷靶材，以射频磁控溅射法在不同基片上沉积制备ZrW2O8薄膜。利用X射线衍射(XRD)仪和扫描电子显微镜(SEM)研究靶材性能和退火温度、气氛以及基片对薄膜的相组成、表面形貌的影响。结果表明：ZrW2O8靶材具有较高的纯度和致密度，磁控溅射制备的薄膜为非晶态，在730 ℃左右通氧条件下退火后得到择优生长的ZrW2O8薄膜；在750 ℃左右退火得到三方相ZrW2O8薄膜；在1200 ℃密闭的条件下淬火得到立方相ZrW2O8薄膜；在15到700 ℃温度区间内，制备的立方相ZrW2O8薄膜负热

Abstract:

The ZrW2O8 thin film of negative thermal expansion (NTE), as a novel functional material, has various potential applications in optics, microelectronics and micro-machine. The ZrW2O8 thin films were deposited on different substrates by RF magnetron sputtering with pure ZrW2O8 ceramic as target. The performance of target and the effects of post-deposition annealing temperature, atmosphere and substrate on the microstructure and morphology of the ZrW2O8 thin films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results indicate that the target is compact and composed of pure ZrW2O8. The as-deposited ZrW2O8 film shows an amorphous phase. The ZrW2O8 film with preferred orientation can be prepared in oxygen atmosphere by annealing at 730 ℃, the trigonal ZrW2O8 film can be prepared by annealing at 750 ℃, and the cubic ZrW2O8 film can be prepared in a sealed cell at 1200 ℃, and the negative thermal expansion coefficient of the resulting cubic ZrW2O8 film is –14.47×10-6 K-1 in the temperature range from 15 ℃ to 700 ℃. With the increase of annealing temperature, some holes and deficiencies appear in the surface of films