一种新型化学溶液沉积法制备涂层导体用RE2O3（RE=Y, Sm, Eu, Dy, Yb）缓冲层

A Novel Chemical Solution Deposition Approach for Preparation of RE2O3 (RE=Y, Sm, Eu, Dy, Yb) Buffer Layer Used for Coated Conductors

摘要:

用一种新的化学溶液沉积方法在双轴织构NiW (200)合金基底上制备了涂层导体用稀土氧化物RE2O3（RE=Y, Sm, Eu, Dy, Yb）缓冲层。分别利用X射线衍射，扫描电子显微镜，原子力显微镜对制得的RE2O3缓冲层的相结构、织构、表面形貌和平整度进行了检测。结果表明，RE2O3缓冲层具有较好的双轴织构，表面平整无裂纹。

Abstract:

A novel chemical solution deposition approach was employed for the preparation of coated-conductor-used RE2O3 (RE=Y, Sm, Eu, Dy, Yb) buffer layers on the biaxial NiW(200) alloy substrate. X-ray diffraction (XRD), scanning electron microscope (SEM), and atomic force microscope (AFM) were used to characterize the phase structure, texture, surface morphology and roughness of the as-received RE2O3 buffer layers. Results show that the obtained RE2O3 buffer layers have well biaxial texture and their surface is smooth and crack free.