半导体异质结界面处Sb/As交换反应研究

Sb/As Exchange at the Interface of Heterostructures

摘要:

利用分子束外延(MBE)技术，在GaAs衬底上生长了高质量的GaAs/GaAsSb超晶格，并通过高分辨X射线衍射(HRXRD)技术对Sb/As交换反应进行研究。实验表明，随着衬底温度的升高，Sb解吸附速度增加，在Sb束流作用下形成的GaAs/GaAsSb超晶格中的Sb含量下降。而Sb束流大小和暴露在Sb 束流中的时间对GaAs/GaAsSb超晶格中的Sb含量影响很小。这说明Sb与GaAs中的As原子的交换反应仅发生在GaAs表层，Sb原子在GaAs中的扩散距离很短

Abstract:

High quality GaAs/GaAsSb superlattices were grown by molecular beam epitaxy (MBE) and the Sb/As exchange action was characterized by high resolution X-ray diffraction (HRXRD). The Sb desorption from the GaAs surface increases with the increase of substrate temperature, causing a net decrease in Sb composition. The Sb flux and the Sb soak time have no obvious effects on the Sb/As exchange. It is shown that the exchange action was restrained on the surface and the Sb diffusion in GaAs was limited