Zr层插入对Ta-N扩散阻挡性能的影响

Effect of Thin Zr Layer Insertion on the Ta-N Diffusion Barrier Performance

摘要:

在不同的沉积温度下，用射频反应磁控溅射方法在Si(100)衬底和Cu膜间制备Ta-N/Zr阻挡层，研究Zr层的插入对Ta-N扩散阻挡性能的影响。结果表明：不同沉积温度下制备的Ta-N均为非晶态结构；Zr层的插入使Ta-N阻挡层的失效温度至少提高100 ℃，在800 ℃仍能有效地阻止Cu的扩散。阻挡性能提高的主要原因是高温退火时形成低接触电阻的Zr-Si层

Abstract:

Ta-N/Zr diffusion barrier was grown on the Si (100) substrates under various substrate temperatures in a RF magnetron sputtering system. Investigated the effect of thin Zr layer insertion on the Ta-N diffusion barrier performance of Ta-N film in Cu metallization has been investigated. The results reveal that the microstructure of Ta-N films is amorphous phase at different substrate temperatures with a higher barrier breakdown temperature of about 100 ℃ than Ta-N film, which can effectively prevent the diffusion of Cu after annealing at 800 ℃ due to the production of Zr-Si layer after annealing at high temperatures