Au/CdZnTe电极接触的热处理优化工艺

Optimized Process of Thermal Treatment of Au/CdZnTe Contacts

摘要:

系统研究在空气气氛下热处理温度对真空蒸发法制备Au/CdZnTe电极接触特性的影响。结果表明，在353~373 K温度范围内进行热处理可以获得更优化的电极接触性能，测试得到电极与CdZnTe接触势垒较低，接触电阻较小，欧姆系数最佳，并且不会破坏CdZnTe体材料本身的性能。而当热处理温度高于400 K时，Au电极沉积表面形貌明显变差，CdZnTe样品的漏电流大幅增加。这可能是由于随着热处理温度的增加，CdZnTe体材料表面的Cd升华加剧，产生大量的Cd空位引起的。

Abstract:

Effects of thermal treatment temperatures from 323 K to 473 K in air atmosphere on the Au/CdZnTe contacts fabricated by thermal vacuum evaporation was investigated systematically. The results show that the optimized performances of the Au/CdZnTe contacts after thermal treatment in air at a range of 353-373 K can be obtained, that is, the contacts possess lower barrier height, smaller contact resistance and better ohmic coefficient, without damaging bulk CdZnTe properties. Nevertheless, performing thermal treatment over 400 K, the deposited surface of Au electrodes will grow worse apparently, and the leakage current of CdZnTe samples enhances significantly. This might be attributed to the increase of the Cd vacancies produced by Cd sublimation from the CdZnTe into air atmosphere with the increase of temperature.