Gd1-xAlyOz:Eux梯度组合芯片的组织结构和发光性能

Structure and Luminescence Properties of Gd1-xAlyOz:Eux Gradational Combinatorial Material Chips

摘要:

将组合材料芯片技术用于Gd1-xAlyOz:Eux荧光材料的研究。通过离子束溅射沉积和两步热处理技术制备Gd1-xAlyOz:Eux梯度组合材料芯片。通过X射线衍射和扫描电镜二次电子像分析发现：根据钆铝配比的不同在组合材料芯片上形成了相应的钆铝酸盐晶相；Gd4Al2O9(GAM)和GdAlO3(GAP)作为Gd2O3-Al2O3中的稳定晶体相，其单相多晶薄膜较容易形成。紫外激发发光照相记录表明Gd1-xAlyOz:Eux可以发射明亮的红色荧光 (Eu3+ 的5D0–7F2发射，主峰值615 nm），且对于Eu3+掺杂，GAP是最好的钆铝酸盐基体相。材料芯片的照相筛选结果和发射光谱、吸收光谱的分析结果一致。

Abstract:

The combinatorial material chip approach is an advanced method for inorganic functional materials and it can rapidly discover and optimize novel materials. In this paper, the approach was used to study flourescent material gadolinium aluminate phosphors (Gd1-xAlyOz:Eux). The Gd1-xAlyOz:Eux gradational combinatorial material chips were prepared by ion beam sputtering deposition and two-step annealing. XRD patterns and SEM second electron images indicate that different gadolinium aluminate phases were formed in the combinatorial material chips corresponding to the different Gd:Al stoichiometry. Gd4Al2O9(GAM) and GdAlO3(GAP) were stable phases in Gd2O3-Al2O3 system, and their single phase polycrystal films were easy to synthesize. Under UV light excitation (λex=254 nm), the gradational material library showed all Gd1-xAlyOz:Eux phosphors gave bright red emission (Eu3+5, D0–7F2, 615 nm) and the best matrix for Eu3+ dopant should be GdAlO3. This library screening result was also verified by photoluminescence spectra and absorption spectra.