碘化汞晶体的热处理与探测器性能表征

Heat Treating and Detectors Characterization of α-HgI2

摘要:

利用自行设计的垂直两温区晶体生长炉，采用静态升华法生长α-HgI2晶体。经过23 d的生长，获得了尺寸约为15 mm×12 mm×5 mm的α-HgI2晶体。通过XRD和4155CVIV电学测试仪表征晶体的相关特性，并对利用该晶体制备的探测器进行核辐射探测性能测试。结果表明，生长的α-HgI2晶体富碘。对晶体适宜的加热可以有效减少富碘现象。晶体的电阻率约为1012 Ω·cm。制备的α-HgI2核辐射探测器对未使用准直器的241Am 辐射源（59.5 keV）在室温下的分辨率为14.6%（8.69 keV）

Abstract:

α-HgI2 crystal was grown using a static sublimation method in a self-designed vertical two-zone growth furnace. After 23 days growth, a single crystal of about 15 mm×12 mm×5 mm was obtained. The as-grown crystal was characterized by means of XRD and 4155 CVIV instrument, and the performance of the detector made with the as-grown HgI2 crystal was tested. The results indicate that excess iodine exists in the as-grown crystal, which can be removed effectively by heating at a feasible temperature. The resistivity of the as-grown crystal is about 1012 Ω·cm. The spectroscopy response to gamma ray (an uncollimated 241Am radiative source with the principal energy of 59.5 keV) of the detectors shows that the energy resolution is 14.6% corresponding to FWHM8.69 keV at room temperature