掺锡氧化钌超级电容器薄膜电极的研制

Preparation of Sn-Doped RuO2 Film Electrode for Supercapacitor

摘要:

采用直流-示差脉冲组合电沉积技术，以 (Ru-Sn)Clx水溶液为沉积液，通过后续热处理工艺制备超级电容器用钽基 (Ru-Sn)O2·nH2O薄膜电极材料。借助扫描电镜 (SEM)、X射线衍射(XRD)仪、X射线光电子能谱 (XPS)和电化学分析仪，研究前驱体(Ru-Sn)Clx转化为(Ru-Sn)O2·nH2O的物相演变及其微观形貌和电容性能。结果表明：合适的热处理工艺能使前驱体 (Ru-Sn)Clx转化为(Ru-Sn)O2·nH2O薄膜，提高薄膜与钽基体的附着力（达到12.3 MPa）；在溶液中加入SnCl2能改善薄膜内部的结合力；随着SnCl2含量的增加，薄膜单位面积的质量增加；薄膜单位面积的电容量先升高后降低，最大值为1.9 F/cm2；而比电容则呈现单调下降趋势

Abstract:

As a good film electrode material for supercapacitor (Ru-Sn)O2·nH2O film was deposited on tantalum foils with aqueous solution of (Ru-Sn)Clx as reservoir by galvanostatic-differential pulse voltammetry and heat treatment. The surface morphology, phase transition of precursor (Ru-Sn)Clx to amorphous (Ru-Sn)O2·nH2O and capacitance of the film were studied by scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electrochemical analyzer, respectively. Results show that the precursor (Ru-Sn)Clx transforms into (Ru-Sn)O2·nH2O film by the proper heat treatment, and the adhesive force of the film with Ta substrate is improved significantly which is measured to be 12.3 MPa. The binding force is improved with addition of SnCl2 into solution. With more addition of SnCl2, the surface mass per unit area is increased; the capacitance of the film per unit area is increased at first and then decreased gradually with a maximum value of 1.9 F/cm2 while the special capacitance drops continuously