钽的CVD动力学规律及显微组织

CVD Kinetics and Microstructure of Ta

摘要:

简述氢气还原氯化钽化学气相沉积钽(CVD)的主要原理，研究氯化、氯气流量、氢气流量和沉积温度4个参数对沉积速率及沉积层显微组织的影响。结果表明：氯化温度对沉积速率的影响最小，沉积温度的影响最大；显微组织由小晶粒区和柱状晶区组成，沉积参数改变，柱状晶晶粒大小发生变化

Abstract:

The principle of chemical vapor deposition (CVD) tantalum was introduced through hydrogen reduction of tantalum chloride. The influences of chlorination temperatures, Cl2 flow, H2 flow and deposition temperatures on deposition rate and crystal structure were studied. The results show that the influence of chlorination temperatures on deposition rate is minimum, while that of deposition temperatures is maximum. Microstructure is composed of small grains and columnar grains. The columnar grain sizes change with deposition parameters