Cu和Al箔扩散结合界面相生长行为研究

Growth Behavior of Intermetallic Phase at Diffusion Bonded Interface between Copper and Aluminium Foil

摘要:

采用等离子活化烧结方法实现了Cu箔和Al箔的固相扩散结合，考察了673～773 K温度范围内界面金属间化合物 (IMCs)层的生成过程和生长动力学。结果表明：界面IMCs生成过程主要包括物理接触、IMCs形核、IMCs沿界面相连和IMCs层连续增厚4个阶段；界面主要由Al4Cu9、AlCu和Al2Cu层构成；各层厚度与反应时间的关系均符合抛物线规律，表明IMCs生长动力学由体扩散所控制；各层生长速率常数与反应温度之间满足Arrhenius关系，且整个IMCs界面层以及Al4Cu9、AlCu和Al2Cu各单层的生长激活能分别为80.78、89.79、84.63和71.12 kJ/mol。

Abstract:

The formation process and growth kinetics of the intermetallic (IMC) layers at the solid-state diffusion-bonded interface between the Cu and Al foils conducted by plasma activated sintering processing were investigated in the temperature range of 673-773 K. The results show that the formation process of the IMCs involves four stages, physical contact, IMCs nucleation, IMCs connection along the interface and continuous thickening of the IMC layers. The interfacial region is composed of Al4Cu9, AlCu and Al2Cu layers. The relationships between each layer thickness and the reaction time follow the approximate parabolic law, indicating the diffusion-controlled growth kinetic of the IMCs. The growth rate constants of the IMC layers conform to the Arrhenius relation with temperature, and the calculated activation energies for the growth of total IMCs, Al4Cu9, AlCu and Al2Cu layers are 80.78, 89.79, 84.63 and 71.12 kJ/mol, respectively.