Investigation of CMP of Ni in the Preparation Process of Micro-Electro-Mechanical System Devices

摘要:

利用自制的抛光液对高纯镍片进行化学机械抛光，研究化学机械抛光过程中抛光压力、pH值、H2O2浓度、络合剂种类及其浓度、SiO2浓度等参数对抛光速率的影响。结果表明在抛光压力为13.79 kPa、H2O2浓度为0.5%，pH值为3.0，SiO2浓度为0.5%，络合剂EDTA及其浓度为1%时，得到最大抛光速率为312.3 nm/min; 在抛光压力为13.79 kPa、pH值为4.0、SiO2浓度为1%、络合剂EDTA为1%、H2O2浓度为1%条件下抛光得到的镍片表面质量较好，表面粗糙度Ra达到5 nm。并利用电化学手段研究了镍片在抛光液中的溶解与钝化行为

Abstract:

CMP (chemical mechanical polish) experiments were carried out by using high purity nickel and home-made slurry. The effects of polishing down force, pH value, H2O2 concentration, chelating agent?species and their concentration as well as particle concentration on the material removal rate (MRR) were investigated. The results reveal that MRR can reach 312.3 nm/min under the following conditions: the down force is 13.79 kPa, H2O2 concentration is 0.5% (mass fraction), pH = 3.0, SiO2 concentration is 0.5% and EDTA concentration is 1%, The better surface quality can be obtained under the following conditions: the down force is 13.79 kPa, H2O2 concentration is 1%, pH = 4.0, SiO2 concentration is 1%, EDTA concentration is 1%, and the surface roughness Ra can reach 5 nm.