白光LED用新型Eu或Gd共掺杂的Ce:YAG单晶荧光材料的光谱性能研究

Study on Spectra Characteristics of Newly-Developed Eu or Gd Co-doped Ce:YAG Phosphor for White-LED

摘要:

开展了白光LED用新型YAG单晶荧光材料的制备和光谱性能研究，采用提拉法生长Eu,Ce:YAG及Gd,Ce:YAG晶体，并通过吸收光谱，激发、发射光谱及电光性能等对晶体材料的光谱特性进行表征。结果表明，Eu或Gd共掺杂的Ce:YAG单晶荧光材料均可以被波长460 nm左右的蓝光芯片有效激发，产生一个范围为480~650 nm的宽峰发射。Eu3+或Gd3+共掺杂会对Ce3+离子的发光产生影响：Eu3+离子的掺杂，会对Ce3+离子的发光产生淬灭效应；而Gd3+离子取代基质Y3+离子可以使Ce3+离子的发射峰发生红移

Abstract:

The growth and spectra characteristics of Eu,Ce and Gd,Ce co-doped YAG single crystals phosphor used for white LED were investigated. Eu,Ce:YAG and Gd,Ce:YAG single crystals were grown by Czochralski method, and their luminescence properties were studied in terms of absorption, emission and excitation spectra. Date analysis reveals that a broad emission band range from 480-650 nm can be produced with blue light excitation. Eu3+ or Gd3+ co-doped ions could affect the emission properties of Ce:YAG crystal: Eu3+ ions co-doping will have the Ce3+ ions luminous quenching effect. On the contrary, Gd3+ ions, which is substituted at the Y site, would shift the emission spectra of Ce:YAG crystal to the red spectra