Mo靶材组织对溅射薄膜形貌及性能的影响

Influence of Mo Target Microstructure on the Morphology and Properties of Sputtered Films

摘要:

将4种组织差异较大的钼靶材在同一溅射设备，同一溅射工艺下进行磁控溅射试验，对溅射后的靶材表面及薄膜表面、截面形貌及方阻进行检测，讨论并分析靶材微观组织对溅射过程及薄膜形貌、晶向、导电性能的影响。结果表明，不同组织靶材溅射的薄膜表面及截面形貌差异较小；靶材80%的晶粒尺寸小于50 μm时，溅射薄膜沉积速率较快，方阻值的变化较小，薄膜厚度较均匀；钼靶材溅射薄膜的择优均为（110）取向，靶材组织对溅射薄膜的取向影响不大；靶材组织的晶粒均匀细小，晶界所占面积率越大，靶材减薄越均匀，靶材利用率越高。

Abstract:

Four kinds of Mo targets with different microstructures were sputtered by the same sputtering line under the same sputtering process. Microstructures (face and fractured cross-section) of sputtered films were analyzed with SEM, and the orientation of crystals and square resistance were measured with XRD and four-probe array method, respectively. Influence of Mo target’s microstructure on deposition rate and square resistance of the sputtered film were discussed. Results show that the sputtering film’s morphology of different Mo-targets is rarely different. When Mo targets are with 80% fine grains under 50 μm, the uniformity of sputtering film’s thickness and resistance are satisfied. The preferred orientation of Mo sputtered film is mostly (110). The target microstructures have little effect on sputtering film crystals’ orientation. When the Mo target’s grain size is finer and the area rate of grain boundary is higher, the sputtering film has faster deposition velocity and the sputtering film’s thickness is larger. The thickness reduction of sputtering target is more homogeneous, which raises the utilization rate of sputtering targets.