热压烧结ITO靶材物相组成与电子结构研究

Study on Electronic Structure and Component of Hot Pressing ITO Sputtering Target Materials

摘要:

采用XRD、XPS对ITO固溶烧结前后物相结构及靶材表面In、Sn、O三元素价态进行表征和研究。结果发现：ITO固溶体中溶质与溶剂离子的半径差异较大是引发掺杂后XRD图谱谱峰偏移的主要原因；而XPS图谱中谱峰偏移则是Sn掺杂导致ITO导带中电子态占有率增加、Fermi能级升高的缘故。研究结果为制备成分、结构均匀的高密度ITO靶材提供了有益的参考

Abstract:

The phase component and surface structure of ITO sputtering target materials fabricated by hot pressing method were characterized by X-ray diffraction and X-ray photoelectron spectroscopy. The results indicate that the peaks of XRD pattern were shifted, which can be explained to the great difference of ion radius between the solute and the solvent. On the other hand, the peak shift of core level in X-ray photoelectron spectrum was due to the increasing occupancy of the ITO conduction band and the increase of Fermi level when Sn was doped. The research is beneficial to fabricate ITO sputtering target material with homogeneous composition and structure and high density