基片偏压模式对高功率脉冲磁控溅射CrN薄膜结构及成分影响研究

Effect of Bias Modes on Structures and Composition of CrN Films Prepared by High Power Pulsed Magnetron Sputtering

摘要:

针对高功率脉冲磁控溅射（HPPMS）的缺点，结合沉积技术（PBII&D）技术，提出了一种新的处理方法——高功率脉冲磁控放电等离子体离子注入与沉积技术（HPPMS-PIID）。本实验采用该技术在不锈钢基体上制备了CrN薄膜，分别采用3种偏压模式：无偏压、–100 V直流偏压和–15 kV脉冲偏压，对比研究了CrN薄膜形貌、结构、成分及性能发生的变化。结果表明：该方法制备的薄膜表面平整、晶粒排列致密，呈不连续的柱状晶生长。相结构单一，主要是CrN (200)相。由于负高压脉冲将大部分进入鞘层的离子都吸引到工件沉积，薄膜沉积速率得到较大提高。另外强烈的高能离子的注入与轰击，使得薄膜的结合力高达57.7 N。

Abstract:

A new processing technique was proposed called High Power Pulsed Magnetron Sputtering-Plasma Ion Implantation & Deposition (HPPMS-PIID) based on High Power Pulsed Magnetron Sputtering (HPPMS) and Plasma-Based Ion Implantation & Deposition (PBII&D) processing. In this paper, CrN films were prepared by this technique and the surface morphologies, structure, composition and properties were studied compared with those of the CrN films fabricated by conventional HPPMS biased by DC–100 V and no bias. Once high voltage is applied, the film shows a smooth surface, very dense packed grains, and a discontinuous columnar structure. A highest intensity of CrN(200) preferential orientation and best adhesion were obtained by HPPMS-PIID due to the highly energetic ion implantation and bombardment. Compared with that of conventional HPPMS, high deposition rate was achieved in HPPMS-PIID since most ions were attracted into the sheath induced by negative high-voltage pulse, and consequently were deposited on the substrate.