双层Mo薄膜的制备工艺与性能

Sputtering Parameters and Properties of Mo Bilayer Thin Films

摘要:

利用直流磁控溅射法在普通钠钙玻璃（SLG）衬底上沉积双层Mo薄膜，对不同条件下沉积的薄膜通过X射线衍射（XRD）仪、扫描电子显微镜（SEM）、四探针电阻仪等对其相结构、表面形貌以及电性能进行测试。结果表明：双层Mo薄膜呈体心立方结构；由于非晶玻璃基底的影响以及沉积时间较短，缓冲层结晶质量差，薄膜表面粗糙，有空洞、裂纹，电阻率大，随温度的升高电阻率减小，薄膜表现出半导体的特性。随着顶层薄膜（溅射工作气压0.1 Pa）沉积时间的增加，薄膜厚度增加，结晶性能变好，表面更加平整、致密，总体电阻率变小，导电性能提高，随温度的升高电阻率增大，薄膜表现出金属特性。与单层膜相比，双层膜具有更低的电阻率，且溅射时间短，厚度薄，能够降低成本，节省源材料，更符合CIGS电池背电极的需求

Abstract:

Molybdenum (Mo) bilayer thin films were deposited on soda-lime glass using DC magnetron sputtering process. The structure, morphology, and electrical properties of Mo films have been studied by XRD, SEM, four-probe tester, etc. The results show that all bilayer films exhibit a body-centered cubic structure. The buffer layer with rough surface and many defects is initially made on the substrate, whose R-T relationship reflects the characteristics of the semiconductor. The resistivity of the thin film decreases with the top layer’s deposition time increasing. In addition, the R-T relationship of these films shows a metal feature. Compared with the monolayer film, bilayer films have lower resistivity and shorter sputtering time, so it greatly satisfies the requirement of CIGS solar cell back electrode.