金属预置层后硒化法制备CIGS薄膜的研究进展

A Review of Selenization of Metal Precursors for the Deposition of CIGS Thin Film

摘要:

系统综述了国内外采用金属预置层后硒化法制备Cu(In,Ga)Se2(CIGS)薄膜的研究进展，重点从预置层制备过程中靶材的选择、叠层方式以及后硒化过程中硒源种类和硒化方式的选择等几个方面对各种工艺的优点、存在的问题和可能的解决方案进行讨论，并对金属预置层后硒化法的发展前景和趋势进行了展望。

Abstract:

This paper reviewed the recent development of the Cu(In, Ga)Se2 (CIGS) layer in terms of the target sources and the layer structures of the as-deposited metallic precursors, the Se-sources and selenization techniques for the post-selenization. The advantages, problems and possible solutions of each technique involved were discussed.