UFeGa5单晶生长及晶体结构研究

Single Crystal Growth and Crystal Structure of UFeGa5

摘要:

采用镓自助熔剂的方法生长出了UFeGa5单晶，采用X射线衍射技术和Rietveld方法对UFeGa5晶体结构进行了研究。结果表明：生长出的UFeGa5单晶体结构完整，结晶性好。UFeGa5具有HoCoGa5型四方结构，空间群为P4/mmm（No.123），其晶格常数为a= 0.42533(2) nm, c= 0.67298(3) nm，并得到了透射电镜(TEM)实验验证

Abstract:

High-quality single crystals of UFeGa5 were grown by the Ga-flux method. The structure of UFeGa5 single crystal was studied by X-ray diffraction and Rietveld method. The results show that the structure of as-grown UFeGa5 single crystal is good and its crystallinity is well. The UFeGa5 has the HoCoGa5 type-structure with space group P4/mmm (No.123). The lattice constants are a=0.42533(2) nm and c=0.67298(3) nm. The crystal structure results are confirmed by transmission electron microscopy