氩离子溅射刻蚀对Ti-Si-C纳米复合薄膜XPS分析的影响

Influence of Ar Ion Sputter-Etching on XPS Analysis of Ti-Si-C Nanocomposite Film

摘要:

通过中频非平衡磁控溅射Ti80Si20复合靶在氩气和甲烷混合气氛中沉积Ti-Si-C复合薄膜。采用X射线衍射仪、Raman光谱和X射线光电子能谱分析薄膜微结构。结果显示：制备的薄膜为非晶碳(a-C:Si:H)包裹约10 nm TiC晶粒的复合结构，氩离子溅射刻蚀对XPS分析结果有显著影响。随氩离子刻蚀溅射刻蚀时间增加，薄膜表面C、O原子含量明显降低，而Ti、Si原子含量增加。氩离子溅射刻蚀导致薄膜非晶碳相发生石墨化转变，即sp3C-C(H)/sp2C-C比率减小，同时，C-Ti*/C-Ti和 C-(Ti+Ti*)/C-C强度比明显增加。

Abstract:

The Ti-Si-C nanocomposite film was deposited in gas mixtures of Ar and CH4 by middle frequency unbalanced magnetron sputtering Ti80Si20 composite targets. The microstructure of the film was investigated by X-ray diffraction, Raman spectrum and X-ray photoelectron spectroscopy. The results show that the film exhibits nc-TiC/a-C:Si:H nanocomposite structure with about 10 nm nanocrystallites TiC embedded in hydrocarbon (a-C:Si:H) matrix. The results of XPS analysis strongly depend on Ar+ sputter-etching. The C and O content on the film surface distinctly decreases, while the Ti and Si content gradually increase with the increasing of Ar+ sputter-etching time. It is found that Ar+ sputter-etching results in the graphitization of the amorphous carbon phase in the nanocomposite film. In other words, the sp3C-C(H)/sp2C-C ratio decreases with the increasing of Ar+ sputter-etching time. In addition, the C-Ti*/C-Ti and C-(Ti+Ti*)/C-C ratios obviously increase.