高纯W-Si合金粉的研制

Preparation of High Purity W-Si Alloy Powder

摘要:

以高纯W粉、Si粉为原料，在真空环境下进行高温预合金化处理，制备了高纯W-Si合金粉。通过优化, 确定了最佳预合金化温度为1000 ℃；合金粉中，单质W相消失，生成WSi2相。粉末粒度呈单峰分布, d50为21.037 μm，d90为50.905 μm，纯度可达到99.995%以上。采用合金粉烧结的磁控溅射靶材的微观组织、成分均匀分布，解决了W-Si靶材成分难以均匀的难题

Abstract:

In order to prepare high purity tungsten silicide (W-Si) alloy powder, high purity W powder and Si powder as starting materials were pre-alloyed in high temperature and vacuum environment. The pre-alloying temperature was 800, 1000 and 1200 oC, and the optimized temperature was 1000 oC. Through the pre-alloying of 1000 oC, the W phase disappeared and the WSi2 phase formed in the powder. The powder particles present single peak distribution and the particle size of d50 is 21.037 μm, and d90 is 50.905 μm. And the powder purity could reach more than 99.995%. Using the pre-alloying tungsten silicide powder as material, the magnetron sputtering target was sintered with a uniform microstructure and alloy composition, which solve the problem of non-uniform microstructure and alloy composition of tungsten silicide target