磁控溅射制备NiO/Ni多层膜的结构和光电性能

Structure and Photoelectric Properties of NiO/Ni Multilayers Prepared by Magnetron Sputtering

摘要:

利用反应磁控溅射和常规磁控溅射方法交替沉积了NiO/Ni纳米多层膜，研究了不同退火环境下多层膜的相结构、微观结构演化及光电性能。XRD和TEM结果表明，沉积态薄膜呈现明显的NiO和Ni交替多层结构；大气退火的NiO/Ni多层膜被氧化成沿(111)晶面择优生长的NiO薄膜；而真空退火的NiO/Ni薄膜仍然保持着明显的多层结构，各层膜的结晶程度提高。沉积态和真空退火态的NiO/Ni多层膜呈现低可见光透过率和低电阻率的特点，电阻率达到10-5 Ω·cm数量级；大气退火的NiO/Ni多层膜呈现49.3%可见光平均透过率和高的电阻特性

Abstract:

NiO/Ni multilayers were deposited alternately by reactive magnetron sputtering and conventional magnetron sputtering. Phase structure, microstructure and photoelectric properties in different annealing environments were studied. XRD and TEM results indicate that NiO and Ni layers appear alternately in as-grown multilayers. Only NiO(111) preferred orientation is found in the films after atmosphere annealing, but multilayer structure still exist in the films after vacuum annealing, whose crystallization increases obviously. Both the as-grown and vacuum annealed films show a low visible light transmittance and a resistivity as low as 10-5 Ω·cm, while the films annealed in the air exhibit a high resistivity as well as a low transmittance of 49.3%.