气体放电伏安特性正反欧姆区间对TiN薄膜微观结构及性能的影响

Influence of positive-Ohm and anti-Ohm sections of gas discharge volt-ampere characteristic on microstructure and properties

摘要:

采用脉冲控制模式将气体放电伏安特性由磁控溅射离子镀的“正欧姆” 区间引入到“反欧姆”区间，并在不同靶电流密度下制备了TiN薄膜。研究了正反欧姆区间对薄膜微观结构及性能的影响。结果表明：在靶电流密度（Itd）大于0.2A?cm-2的反欧姆区间，薄膜具有良好的表面质量和致密程度；且薄膜的硬度和膜基结合强度分别由正欧姆区间Itd为0.11A?cm-2的18.9GPa、4.5N提升到反欧姆区间Itd为0.38 A?cm-2的25.8GPa、18N。

Abstract:

The volt-ampere characteristics of gas discharge was introduced form positive-Ohm of magnetron sputtering ion plating into anti-Ohm section using pulse mode and deposited TiN films under different target current density. The influences of positive-Ohm and anti-Ohm sections on the microstructure and properties of the films were studied. The results indicated that in the anti-Ohm section with target current density (Itd) is more than 0.2A?cm-2, the films have good surface quality and density degree, and the hardness and membrane-binding strength were upgraded from 18.9GPa、4.5N in positive-Ohm section (Itd=0.11A?cm-2) to 25.8GPa、18N in anti-Ohm section (Itd=0.38 A?cm-2) respectively.