热处理参数对LZO膜外延生长的影响

Influence of heat-treatment parameters on the epitaxial growth of LZO film deposited by CSD process

摘要:

本文研究了热处理参数对LZO膜外延生长的影响。结果显示实验条件范围内，升高热处理温度、延长热处理时间和加快升温速度有利于提高 (400) LZO衍射峰的强度。相对于热处理温度、热处理时间和升温速度，LZO膜的织构类型对热处理时的氧分压十分敏感，氧分压直接影响到能否制备出具有单一织构成分的LZO膜。进一步分析显示，传统的形核生长理论可以很好地解释热处理温度、热处理时间和升温速度对LZO膜外延生长的影响。增加氧分压对LZO膜的外延生长存在双重作用，一方面提高氧分压可以降低膜中的积碳量，有利于LZO晶粒的长大，但另一方面，提高氧分压降低膜中的积碳后将导致对自发形核长大过程的抑制作用减弱，最终使得LZO膜不具有单一的立方织构。因此，更合理地控制/改变不同热处理阶段的氧分压才能在改善LZO膜生长动力学的同时又不影响其外延生长。

Abstract:

Influences of four parameters of CSD process to deposit LZO films on the epitaxial growth of the LZO films were studied. The results indicated that the intensity of (400) peak increased with increasing the heating temperature, heating time and heating rate. The results about the influence of oxygen partial pressure showed that the texture of LZO film was very sensitive to oxygen partial pressure during heat-treatment, and the influence of oxygen partial pressure on the texture of LZO film was more important than that of other parameters in order to obtain a cube-textured LZO film. The influence of heating temperature, heating time, and heating rate could be explained by the classic nucleation and growth theory. However, oxygen partial pressure had a dual role, one was to decrease the content of residual carbon in the film, which was good for the growth of LZO grains, and the other was to weaken the inhibition of the spontaneous nucleation and growth of LZO grains due to decreaseing the content of residual carbon in the film, and finally the texture of LZO film was not a cube texture. So controlling or modifying the oxygen partial pressure at the different stages of heat-treatment may be a key to improve the kinetic of LZO grains and not to influence the epitaxial growth of LZO film.