高选择性的In2O3基热线型氢气传感器

Highly selective In2O3-based hot-wire hydrogen gas sensor

摘要:

摘 要: 采用反相微乳液法合成出纳米氧化铟(In2O3)，利用其制备出了热线型气体传感器。利用二甲基二乙氧基硅烷 (DEMS) 的化学气相沉积，在敏感元件表面形成一层致密的二氧化硅(SiO2)分子筛层，限制了除氢气(H2)以外其它分子直径较大的还原性气体向气敏材料内层的扩散，提高了传感器对H2的选择性和响应。参考元件的补偿作用降低了环境湿度的影响，通过气敏机理模型讨论了其内在原因。该传感器具有对H2较高的选择性和响应，优良的抗环境影响的能力，以及较好的稳定性和较低的功耗。

Abstract:

Abastract: The nanosized In2O3 was synthesized via the reverse microemulsion method. The hot-wire semiconductor metal oxide gas sensor was fabricated based on the In2O3. A dense layer of SiO2 on the surface of the sensitive element was formed by chemical vapor deposition of diethoxydimethylsilane (DEMS). The SiO2 functioned as molecular sieve, thereby the diffusion of reducing gases with large molecular diameter into sensing layer, except for H2, was restricted, resulting in high selectivity and response to H2. The effect of environmental humidity on the sensor response was reduced by the compensation of reference element, and the underlying reason of reduction was discussed by gas-sensing mechanism model. The sensor had high selectivity and response to H2, low ambient temperature and humidity dependence, excellent long term stability and low power consumption.