三元缺陷化合物CuGa3Te5的热电性能

Thermoelectric Properties of a Ternary Defect Compound CuGa3Te5

摘要:

采用放电等离子烧结法（SPS）制备了三元缺陷化合物CuGa3Te5热电半导体，并分析研究了其结构和热电性能。XRD分析结果表明，该半导体为单相化合物CuGa3Te5，直接带隙宽度 (Eg) 约为1.0 eV。经热电性能测试分析，在717 K时CuGa3Te5的ZT值达到最大值0.3。

Abstract:

A ternary defect compound CuGa3Te5 was synthesized by a spark plasma sintering technique and its structures and thermoelectric properties were evaluated at 318~717 K. The XRD analysis indicates that the compound is single phase CuGa3Te5 with a direct band gap (Eg) of ~1.0 eV. The maximum thermoelectric figure of merit ZT is 0.3 at 717 K.