Fe-Ga薄膜的微结构与磁性能研究

The Micro-structure and Magnetic Properties of Fe-Ga Thin Films

摘要:

采用磁控溅射方法，以Si(100)为衬底在40W-80W功率下制备了Fe83Ga17薄膜，通过XRD、SEM、室温磁滞回线以及MFM的测量研究了不同溅射功率制备的Fe-Ga薄膜的结构、形貌、磁性能和磁畴。XRD结果表明室温下薄膜样品是bcc(110)晶体结构。SEM观察结果表明薄膜颗粒在40~70 nm之间且随着功率增大，薄膜颗粒的尺寸变大，薄膜厚度增加。室温磁滞回线的测量结果表明一定范围内随着功率增大，样品的矫顽力Hc总体呈上升趋势，饱和磁化强度Ms的变化规律并不明显，剩余磁化强度Mr和矩形比Mr/Ms呈缓慢下降的趋势，饱和磁场强度Hs增加。磁畴的观察结果表明样品的磁畴为迷宫畴结构，且随着功率增大，磁畴的尺寸增大。

Abstract:

We present a study of the growth and magnetic properties of Fe83Ga17 thin films prepared by the dc magnetron sputtering method, sputter deposited on Si(100) substrates for sputtering powers in the range 40W≤P≤80W. The structure and magnetic properties? of Fe83Ga17 thin films have been investigated by using X-ray diffraction analysis (XRD), scanning electron microscope (SEM)，physical property measurement system (PPMS) and magnetic force microscope (MFM). The results show that all samples exhibited a (110) disordered bcc structure, additional, the grain size of Fe83Ga17 thin films is about 40~70nm and the grain size slowly increases with increase in the sputtering power. The remanent magnetization Mr and the remanence ratio Mr/Ms tend to decrease slowly with increase in the sputtering power while the coercivity Hc and saturated magnetic field strength Hs go the opposite way. However, the changes in the saturation magnetization Ms are not so clear. The magnetic domain (MD) patterns showed the labyrinth structure and the domain size was increased with increase in the sputtering power.