Al掺杂对Ti3SiC2陶瓷制备和性能的影响

Influence of Al doping on the preparation and properties of Ti3SiC2 ceramics

摘要:

采用热压烧结法制备了Al掺杂的Ti3SiC2陶瓷,通过X射线衍射仪、扫描电子显微镜、能谱仪、矢量网络分析仪等,分别对所制备的样品进行了表征和抗氧化性能、微波介电性能测试。结果表明：所制备的Al掺杂陶瓷具有相当高的Ti3SiC2质量分数,陶瓷晶粒呈现明显的层状特征。相比于未掺杂样品, 通过Al掺杂途径,可显著提高Ti3SiC2陶瓷1200℃高温下的抗氧化性能,并使Ti3SiC2陶瓷的介电常数实部ε′和虚部ε″值大幅度增加,其在8.2-12.4GHz频率范围的均值分别为60.8和6.28。

Abstract:

Al-doped Ti3SiC2 ceramics were prepared by hot-pressing sintering, which were characterized and measured for oxidation resistance and microwave dielectric property by X-ray diffractometer, scanning electron microscope, energy dispersive spectroscopy and vector network analyzer, respectively. Results showed that the prepared ceramic with Al doping had higher mass fraction of Ti3SiC2, and that the as-prepared ceramic grains had the typical laminated appearance. Through the Al doping approach, the oxidation resistance of Ti3SiC2 ceramic at 1200℃ was efficiently improved, and its real component ε′ and imaginary component ε″ of permittivity were greatly increased, compared to undoped sample, which were 60.8 and 6.28 in average in the frequency range of 8.2-12.4GHz, respectively.