辉弧放电过渡区间靶电流密度对TiN薄膜 结构及性能的影响

Influence of target current density at glow-arc discharge transitional section on microstructure and properties of TiN films

摘要:

通过可调脉冲电源控制模式将气体放电伏安特性引至辉弧放电过渡区间，并在不同的靶电流密度条件下制备了TiN薄膜，采用XRD,SEM,TEM,纳米压痕仪与涂层附着力自动划痕仪等表征方法对比研究了辉弧放电过渡区间靶电流密度对薄膜组织结构、硬度及膜基结合强度的影响。结果表明，随着靶电流密度增大，镀料粒子由溅射环境的碰撞脱靶逐渐转变为碰撞增强热发射脱靶，具有更高密度、高离化、高能量的沉积粒子；薄膜由非晶态逐渐转变为晶态，具有更为良好的表面质量和致密程度，且薄膜的硬度、膜基结合力分别由13.4GPa、2.4N提高至24.7 GPa、21.6N。

Abstract:

The volt-ampere characteristics of gas discharge was introduced into the glow-arc discharge transitional section using adjustable pulse power control mode and deposited TiN films under different target current density conditions.The influence of target current density on the microstructure, hardness and bonding strength of the films was studied by means of XRD, SEM, TEM, nano indentation tester and coating adhesion automatic scratch tester. The results showed that plating material particles leave-target mechanism transformed form collide leave-target in sputtering condition to collide enhance heat emission leave-target and the deposition particles had a higher density, high ionization and high energy with the increase of target current density. The films have better surface quality and density degree, and the hardness and membrane-binding strength were upgraded from 13.4GPa、10.5N to 24.7GPa、16.8N respectively.