半导体型与金属型单壁碳纳米管的“原位”选择性制备及其研究进展

“In Situ” Selective Growth of Semiconducting and Metallic SWNTs: A Review

摘要:

单壁碳纳米管（SWNTs）由于其高强度、高韧性、高导电率和高导热率被广泛用于微纳电子器件领域。然而，目前普通方法制备的SWNTs均为金属型和半导体型的混合物，极大地阻碍了SWNTs的应用。实现不同结构的SWNTs的有效分离是解决其研究与应用困境的有效途径。本文以金属型SWNTs（m-SWNTs）和半导体型SWNTs（s-SWNTs）的选择性制备为目标，系统分析和比较近几年发展的“原位”选择性制备的主要技术和方法，并在此基础上总结了SWNTs的金属型和半导体型控制生长的基本思路及实现途径，以期为后续SWNTs的规模化制备奠定基础。

Abstract:

Single-walled carbon nanotubes (SWNTs) are the ideal candidates for making next-generation electronic circuits because of their high strength, high toughness, high thermal stability, and superior electrical conductivity . However, achieving these goals is extremely challenging because the as-grown SWNTs contains mixtures of semiconducting (s-) and metallic- (m-) SWNTs, typically inadequate for integrated circuits. How to separate these two spcies according to their electronic structure and chemical activity has attracted much recent attention. Herein, this review focuses on the “in situ” metheds and techniques for the selective growth of s- and m-SWNT. Based on the understanding of the growth mechanism of those strategies, we try to propose the general guideline on that how can we develop the optimal condition for large-scaled growth of s- and m-SWNTs.