直流电弧等离子体法制备In(Sn)-O及Sn(In)(Sb)-O系纳米颗粒

Synthesis of In(Sn)-O and Sn(In)(Sb)-O Systems Nanoparticles Using DC Arc Plasma Method

摘要:

采用一种新的直流电弧等离子体法,通过对熔融的金属进行爆破(或气化),制备出了单相SnO₂、In₂O₃纳米颗粒以及In₂O₃:Sn (ITO)、SnO₂:Sb (ATO)和SnO₂:In:Sb (IATO)多元复合纳米颗粒。XRD结果表明,所制备的SnO₂和In₂O₃基多元复合纳米颗粒均为单相结构,没有其它杂相；TEM结果表明,直流电弧等离子体所制备的单相纳米颗粒分散性好,尺寸约20-50nm。该法合成的纳米ITO和ATO颗粒所制备的ITO靶材和SnO₂电极密度高、电阻率低,表明所制备的ITO和ATO纳米颗粒可以应用于平板显示和导电电极领域。

Abstract:

A new DC arc plasma concept to produce metal oxides nanoparticles by metal melting, blasting or gasification processes is presented. It is exemplified for the preparation of SnO₂, In₂O₃ single phases nanoparticles and the base of SnO₂, In₂O₃ composite nanoparticles such as In₂O₃:Sn (ITO), SnO₂:Sb (ATO), and SnO₂:In:Sb (IATO). X-ray diffraction (XRD) indicated that the doped SnO₂ and In₂O₃ are in single phase with no other secondary phases. Transmission electron microscopy (TEM) showed the particle size ranged from 20 nm to 50 nm for the prepared single phases of nanoparticles with good dispersion. The prepared ITO and ATO nanoparticles were utilized in ITO target and ATO electrode, and their density and electrical properties were tested. The prepared ITO target and ATO electrode show high density and low resistivity and film-forming effect is good for ITO target, implying that the ITO and ATO nanoparticles prepared by DC arc plasma can be applied in the field of flat panel displays and conductive electrodes.