CuCr0.5表面制备Cu-Diamond层及其性能的研究

Fabrication and Characterization of Cu-Diamond Composite Layer on CuCr0.5 Substrate

摘要:

在CuCr0.5基体上复合电沉积Cu-Diamond“上砂”层,用模压法将“上砂”层中的金刚石压入基体中,在纳米铜悬浮液中补粉+模压来填充“V”型沟槽,最后烧结形成与基体结合牢固的Cu-Diamond复合层。用扫描电镜对不同制备阶段的Cu-Diamond进行研究,并用电阻应变分析法对Cu-Diamond的表面热膨胀系数进行了评估。结果表明：用W40金刚石粉制备的Cu-Diamond层模压后金刚石/基体界面出现“V”型沟槽,在纳米铜悬浮液中补粉+模压,填充在“V”型沟槽中的铜粉疏松,经900 ℃+60 min烧结后,“V”型沟槽得到完整填充。当Cu-Diamond复合层中金刚石体积含量约为40～45%时,表面热膨胀系数为11.7×10_-6/℃。

Abstract:

A Cu-Diamond composite layer was successfully fabricated on CuCr0.5 alloy substrate by electroplating a Cu-diamond composite ‘planting sands’ layer, mould pressing the diamond particles into CuCr0.5 substrate, filling the nano-copper grains suspending in water into the ‘V’ grooves and mould pressing the composite layer to fix the nano-copper powder on Cu-diamond layer and finally sintering the sample with 900℃+60min parameters at Ar+H₂(10vol.%) protecting atmosphere. The surface morphology at different fabricating stages was investigated in details by scanning electron microscopy (SEM) and the surface thermal expansion coefficient of Cu-diamond composite layer was tested by electric resistance strain gauge method. The results show that the ‘V’ grooves were formed at the vicinity of substrate/diamond interface after mould pressing Cu-diamond composite layer fabricated by using W40 diamond powder. The ‘V’ grooves can be perfectly filled by filling the nano-copper grains into the ‘V’ grooves and mould pressing the composite layer and finally sintering the sample with 900℃+60min parameters at Ar+H₂(10vol.%) protecting atmosphere. The surface thermal expansion coefficient of Cu-diamond composite layer was 11.7×10_-6/℃ when the volume percent of W40 diamond particles on Cu-diamond layer was 40~45%.