调制脉冲磁控溅射峰值靶功率密度对纯Ti镀层沉积行为的影响

Nanocrystalline Ti films deposited by modulated pulsed power magnetron sputtering

摘要:

调制脉冲磁控溅射可通过改变强/弱离化阶段的脉冲强度和占空比等电场参量，大幅调控镀料粒子的离化率、沉积能量和数量，可实现对沉积镀层形核与生长过程的精确把控。本文在非平衡闭合磁场条件下，采用调制脉冲磁控溅射技术，通过对其强离化脉冲阶段的脉冲宽度和靶功率进行调控获得持续增大的峰值靶功率密度，并在此条件下制备多组纯Ti镀层，对其微观形貌和力学性能进行了检测分析。研究结果表明，当强离化脉冲阶段的峰值靶功率密度由0.15 kW×cm-2持续增大至0.86 kW×cm-2时，所制备的纯Ti镀层具有11nm的平均晶粒尺寸、较其他峰值靶功率密度条件下制备镀层更为致密的组织结构、平整的表面质量（表面粗糙度Ra为11nm）和良好的力学性能。

Abstract:

Modulated pulsed power magnetron sputtering (MPPMS) has the ability to control ionization rate, energy and quantity of the deposited particle through adjusting the pulsed intensity and duration, thus modifying the nucleation and growth process of the thin film. In this work, nanocrystalline Ti films are deposited by using MPPMS technique in a closed field unbalanced magnetron sputtering (CFUBMS) system under different peak target power densities of the strong-ionized period (Pd). The modulated pulse power (MPP) is employed to modify the Pd by varying pulse lengths and average target powers. The results show that a nanocrystalline Ti film with grain size of 11 nm exhibits a dense microstructure and smooth surface (roughness was 11 nm) when the Pd is 0.86 kW×cm-2. The improved properties of the as-prepared Ti film are discussed.