石墨烯掺杂和烧结温度对MgB<sub>2</sub>块体微观结构和超导性能的影响

Effect of graphene doping and sintering temperature on microstructure and superconducting properties of MgB<sub>2</sub> bulks

摘要:

我们采用未掺杂的粉末制备了MgB<sub>2</sub>块体作对比,研究了石墨烯掺杂对MgB<sub>2</sub>块材微观结构和超导性能的影响,研究了退火温度对石墨烯掺杂MgB<sub>2</sub>块材微观结构和超导性能的影响。对烧结后的样品采用XRD,SEM,SQUID进行了相组成,微观结构和超导性能等分析检测。研究发现石墨烯掺杂明显提高了MgB<sub>2</sub>超导材料的临界电流密度,在20 K和1 T磁场下,最大的临界电流密度达到1.8×10<sub>5</sub>A/cm<sub>2</sub>。

Abstract:

The effect of graphene doping on the microstructure and superconducting properties of MgB<sub>2</sub> bulks has been examined in comparison with the case of un-doped MgB<sub>2</sub>. The correlations among annealing temperatures, microstructures and superconducting properties in graphene doped MgB<sub>2</sub> bulks were investigated. The phase, microstructure and superconductivity of MgB<sub>2</sub> were characterized by means of X-ray diffraction (XRD), scanning electron microscope (SEM) and superconducting quantum interference device (SQUID). It is found that the grapheme doping results in an obviously improvement of the critical current density. The highest critical current density reaches 1.8×10<sub>5</sub>A/cm<sub>2</sub> at 20 K and 1 T.