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定向凝固Mg2Si1-xSnx合金功率因子优化和热电性能研究
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作者单位:

西安航空学院

基金项目:

国家自然科学基金青年项目(项目号:51904219); 西安航空学院校级科研资(项目号:2019KY0203)


Power Factor Optimization and Thermoelectric Properties of Mg2Si1-xSnx Alloys by Directional Solidification
Author:
Affiliation:

Xi’an Aeronautical University,Xi’an

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    摘要:

    通过高温度梯度定向凝固方法制备了高质量的Mg2Si1-xSnx晶体，对1.5at%Bi掺杂条件下不同Sn含量的合金进行了热电性能测试和电子传输性能的第一性原理计算。x=0.625时，由于达到能带收敛条件，Seebeck系数和功率因子均达到最大值，测试结果分别为-247μVK-1和5.7mWm-1K-2，与计算预测结果一致，与纳米级晶粒的块体材料相比，功率因子提升了25%。在T=700K处计算预测的最大ZT值为1.3，而实验测试值为1.16，而且在中温区的550K到800K之间预测和实验测试的ZT值均可以保持在0.9以上。通过优化功率因子的方法可以有效提高Mg2Si1-xSnx晶体的热电性能，而且可以避免热电器件在高温环境长时间服役时，由于晶粒长大而导致的性能降低。

    Abstract:

    Single-phase Mg2Si1-xSnx crystal was successfully directionally solidified from the melt. Thermoelectric properties were tested for 1.5at%Bi-doped crystals with different Sn contents, and electronic transport properties were predicted by the first-principle calculation. At x=0.625, tested Seebeck coefficient and power factor is -247μVK-1 and 5.7mWm-1K-2, respectively, because the band structure of Mg2Si0.375Sn0.625 is converged. This result is consistent with the calculated values, and the power factor enhanced 25%. The predicted and tested results of ZT maximum are 1.3 and 1.16 at T=700K, respectively. In the medium temperature range of 550K-800K, the predicted and tested ZT values can keep above 0.9. Power factor optimization is an effective way to improve the thermoelectric properties of Mg2Si1-xSnx crystal. In addition, the performance deterioration of thermoelectric devices induced by nano-sized grain growth at high service temperature can be avoided.

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李鑫,谢辉,张亚龙,魏鑫.定向凝固Mg2Si1-xSnx合金功率因子优化和热电性能研究[J].稀有金属材料与工程,2020,49(8):2779~2785.[Li Xin, Xie Hui, Zhang Yalong, Wei Xin. Power Factor Optimization and Thermoelectric Properties of Mg2Si1-xSnx Alloys by Directional Solidification[J]. Rare Metal Materials and Engineering,2020,49(8):2779~2785.]
DOI：10.12442/j. issn.1002-185X.20191096

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  • 收稿日期:2019-12-27
  • 最后修改日期:2020-03-02
  • 录用日期:2020-03-05
  • 在线发布日期: 2020-09-27

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