高迁移率的钛掺杂氧化铟薄膜在晶硅/非晶硅异质结电池上的研究

High mobility Ti-doped In2O3 films for amorphous/crystalline silicon heterojunction solar cells

摘要:

本文使用钛掺杂氧化铟旋转靶制备透明导电薄膜应用在晶硅/非晶硅异质结电池上。在不同氧含量下，研究T100薄膜的光电性能，同时对比分析ITO薄膜。在电镜下T100薄膜呈现出柱状结构，并且展示出优异的光学性能。T100薄膜最大载流子迁移率可以达到75.6 cm2 V?1s?1。相比于ITO薄膜，T100薄膜具有优异的电学传导和透光率，因此在异质结电池量产线上电池转换效率可以实现0.26%的提升。

Abstract:

A newly Ti-doped In2O3 rotary target was used to prepare transparent conductive oxide (TCO) films for amorphous/crystalline silicon heterojunction solar cells. The changes in electrical and optical properties of TCO films were investigated based on T100 thin films deposited under various O2 content mixture and ITO reference. A columnar structure was observed and exhibited high quality on optical performance. Maximum mobility of 75.6 cm2 V?1s?1 was observed in Ti-doped In2O3 films. Compared to the ITO films, it was verified that T100 material can support enhancement of 0.26% in cell conversion efficiency based on HJT production line, mainly benefit from their excellent electrical transport properties, as well as the high transparency.