CVD在介电材料表面直接制备石墨烯进展

Progress in direct preparation of graphene on the surface of dielectric substrate by CVD

摘要:

石墨烯一种SP2碳杂化的二维平面材料，因其卓越的电学、机械、光学性能，在半导体、电子、光学、传感器等多领域具有巨大的应用潜力。虽然石墨烯可以通过直接从母材剥离或过渡金属上生长来制备，但不受控制的生产或额外的复杂转移过程对石墨烯膜层造成一定损伤，而在介电衬底上通过CVD法直接制备石墨烯成为一个有意义的研究方向。文章综述国内外介电材料表面CVD法直接制备石墨烯研究进展，系统的介绍了介电材料表面直接制备石墨烯的主要方法，阐明生长过程中催化条件、生长参数是介电材料表面制备石墨烯的关键。此外，由于介电材料表面的弱催化作用，其表面直接制备石墨烯晶畴尺寸小，电性能较差，因此实现介电材料表面石墨烯高质量、可控制备是今后研究的方向。

Abstract:

Graphene, a one-atom-thick layer of carbon with sp2 hybrid orbital bonding and two-dimensional structure material ，has excellent electrical, mechanical, and optical properties. With its extraordinary structure and excellent properties，graphene has great application potential in many fields such as semiconductors, electronics, optics, and sensors. While graphene can be prepared by direct exfoliation from mother materials or growth on transition metals, the uncontrolled production or the additional complex transfer process has been challenging for graphene applications, therefore the direct preparation of graphene on the dielectric substrate by CVD has become an interesting research direction. This paper reviews the research progress of direct preparation of graphene by CVD on dielectric substrates surface at home and abroad, systematically introduces the main methods of direct preparation of graphene on dielectric material surface, and expounds that the catalytic conditions and growth parameters during the growth process are the key to the preparation of graphene on dielectric substrates. In addition, due to the weak catalysis on the surface of dielectric materials, the direct preparation of graphene on the surface has small domain size and poor electrical properties. Therefore, the realization of high quality and controllable preparation of graphene on the surface of dielectric materials is the future research direction.