热蒸发法制备金属碲纳米线

Preparation of metal tellurium nanowires by thermal evaporation

摘要:

在真空管式炉内，以Bi2Te3为蒸发源，在蒸发温度560 ℃，保温时间2h条件下，采用热蒸发法在涂有Au溶胶的石英基片上制备出了大量碲纳米线。通过XRD、SEM、HRTEM等仪器对碲纳米线的组织结构和微观形貌进行了表征与分析。结果表明，制备出的碲纳米线为沿（101）方向取向生长的三方单晶碲纳米线，直径范围在40~100nm之间，生长机制符合VLS生长机制。蒸发源材料和Au溶胶是热蒸发法制备碲纳米线的关键因素。

Abstract:

A large number of tellurium nanowires were prepared on quartz substrates coated with Au sol by thermal evaporation method in a vacuum tube furnace with Bi2Te3 as the source at 560 °C for 2h. The microstructure and morphology of tellurium nanowires were characterized by XRD, SEM and HRTEM. The results showed that the as prepared tellurium nanowires were cubic single crystal tellurium nanowires oriented along the (101) direction with diameters ranging from 40 to 100 nm. The growth mechanism conforms to the VLS growth mechanism .The evaporation source material and Au sol were the key factors for the preparation of tellurium nanowires by thermal evaporation.